Patent Number: 8,716,137

Title: Method for etching polycrystalline silicon, method for manufacturing semiconductor device, and etching program

Abstract: According to an embodiment, a method for etching polycrystalline silicon includes a step of holding the polycrystalline silicon at a temperature higher than or equal to T.sub.E (K) given in a following equation; and a step of etching the polycrystalline silicon by dry etching with an etching gas containing CF.sub.4 and O.sub.2, .times..times..times..times..times..times. ##EQU00001## where d (nm) is etching amount of the polycrystalline silicon, r (nm) is surface roughness of the polycrystalline silicon after the etching, x is ratio of flow rate of CF.sub.4 gas to sum of flow rate of the CF.sub.4 gas and flow rate of O.sub.2 gas, and k (eV/K) is Boltzmann constant.

Inventors: Sakai; Takayuki (Ishikawa-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/00 (20060101)

Expiration Date: 5/06/12018