Patent Number: 8,716,152

Title: Method of controlling silicon oxide film thickness

Abstract: A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.

Inventors: Zhang; Yuanchang (Columbus, OH)

Assignee: Natcore Technology, Inc.

International Classification: H01L 21/31 (20060101); H01L 21/469 (20060101)

Expiration Date: 5/06/12018