Patent Number: 8,716,589

Title: Doped lead tellurides for thermoelectric applications

Abstract: A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb.sub.1-(x1+x2+ . . . +xn)A.sup.1.sub.x1A.sup.2.sub.x2 . . . A.sup.n.sub.xnTe.sub.1+z (I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm.ltoreq.x1 . . . xn.ltoreq.0.05 -0.05.ltoreq.z.ltoreq.0.05 and n.gtoreq.2 A.sup.1 . . . A.sup.n are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A.sup.1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.

Inventors: Haass; Frank (Erzhausen, DE)

Assignee: BASF Aktiengesellschaft

International Classification: H01L 35/16 (20060101)

Expiration Date: 5/06/12018