Patent Number: 8,716,728

Title: Nitride semiconductor light-emitting diode device

Abstract: A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.

Inventors: Kudo; Hiromitsu (Ushiku, JP), Taniguchi; Hirokazu (Amagasaki, JP), Okagawa; Hiroaki (Ushiku, JP), Hiraoka; Shin (Ushiku, JP), Joichi; Takahide (Ushiku, JP), Shima; Toshihiko (Ushiku, JP)

Assignee: Mitsubishi Chemical Corporation

International Classification: H01L 33/22 (20100101)

Expiration Date: 5/06/12018