Patent Number: 8,716,770

Title: Solid-state imaging apparatus that includes a local interconnect and method for manufacturing the same

Abstract: A solid-state imaging apparatus comprises: a plurality of photoelectric conversion elements for converting light into an electric charge, including a first photoelectric conversion element; a first semiconductor region from which the electric charge is transferred from a first photoelectric conversion element; an amplifying MOS transistor including a gate electrode connected to the first semiconductor region to amplify the potential of the first semiconductor region; an insulating film; a metal wiring layer above the insulating film; a local interconnect of a first conductor, formed in the insulating film, for connecting the gate electrode of the amplifying MOS transistor to the first semiconductor region not through the metal wiring layer; a second semiconductor region, different from the first semiconductor region; and a second conductor for connecting the second semiconductor region to at least a part of the metal wiring layer.

Inventors: Okagawa; Takashi (Oita, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: H01L 23/528 (20060101); H01L 31/05 (20060101)

Expiration Date: 5/06/12018