Patent Number: 8,716,774

Title: Semiconductor device having a buried gate type MOS transistor and method of manufacturing same

Abstract: A semiconductor device includes a semiconductor substrate having a first gate groove having first and second sides opposite to each other; a first diffusion region underneath the first gate groove; a second diffusion region in the semiconductor substrate, the second diffusion region covering an upper portion of the first side of the first gate groove; and a third diffusion region in the semiconductor substrate. The third diffusion region covers the second side of the first gate groove. The third diffusion region is coupled to the first diffusion region. The third diffusion region has a bottom which is deeper than a bottom of the first gate groove. The bottom of the third diffusion region is different in level from the bottom of the first diffusion region.

Inventors: Mikasa; Noriaki (Tokyo, JP)

Assignee:

International Classification: H01L 27/108 (20060101); H01L 29/76 (20060101); H01L 29/94 (20060101); H01L 31/119 (20060101)

Expiration Date: 5/06/12018