Patent Number: 8,716,789

Title: Power semiconductor device

Abstract: A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

Inventors: Ono; Syotaro (Hyogo-ken, JP), Izumisawa; Masaru (Hyogo-ken, JP), Ohta; Hiroshi (Hyogo-ken, JP), Yamashita; Hiroaki (Hyogo-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/66 (20060101)

Expiration Date: 5/06/12018