Patent Number: 8,716,810

Title: Selective floating body SRAM cell

Abstract: A memory cell has N.gtoreq.6 transistors, in which two are access transistors, at least one pair [say (N-2)/2] are pull-up transistors, and at least another pair [say (N-2)/2] are pull-down transistors. The pull-up and pull-down transistors are all coupled between the two access transistors. Each of the access transistors and the pull-up transistors are the same type, p-type or n-type. Each of the pull-down transistors is the other type, p-type or n-type. The access transistors are floating body devices. The pull-down transistors are non-floating body devices. The pull-up transistors may be floating or non-floating body devices. Various specific implementations and methods of making the memory cell are also detailed.

Inventors: Chang; Josephine B. (Mahopac, NY), Chang; Leland (New York, NY), Koester; Steven J. (Ossining, NY), Sleight; Jeffrey W. (Ridgefield, CT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/70 (20060101)

Expiration Date: 5/06/12018