Patent Number: 8,716,813

Title: Scaled equivalent oxide thickness for field effect transistor devices

Abstract: A field effect transistor device includes a first gate stack portion including a dielectric layer disposed on a substrate, a first TiN layer disposed on the dielectric layer, a metallic layer disposed on the dielectric layer, and a second TiN layer disposed on the metallic layer, a first source region disposed adjacent to the first gate stack portion, and a first drain region disposed adjacent to the first gate stack portion.

Inventors: Ando; Takashi (Tuckahoe, NY), Choi; Changhwan (Seoul, KR), Kwon; Unoh (Fishkill, NY), Narayanan; Vijay (New York, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/78 (20060101)

Expiration Date: 5/06/12018