Patent Number: 8,716,836

Title: Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device

Abstract: A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.

Inventors: Takada; Tomoyuki (Tsukuba, JP), Yamanaka; Sadanori (Tsukuba, JP), Hata; Masahiko (Tsuchiura, JP), Yamamoto; Taketsugu (Tsukuba, JP), Wada; Kazumi (Bunkyo-ku, JP)

Assignee: Sumitomo Chemical Company, Limited

International Classification: H01L 21/331 (20060101); H01L 29/737 (20060101)

Expiration Date: 5/06/12018