Patent Number: 8,717,471

Title: Solid-state imaging device applied to CMOS image sensor

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array, two signal lines and a row scanning circuit. The row scanning circuit simultaneously renders conductive, by the first read-out row scanning circuit and the second read-out row scanning circuit, the two transfer transistors, which are connected to two photoelectric conversion elements do not share a floating diffusion portion neighboring in the column direction, thereby reading out signals in parallel from the photoelectric conversion elements of the pixels of two rows of an odd-numbered row and an even-numbered row.

Inventors: Sato; Maki (Yamato, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H04N 3/14 (20060101); H04N 5/335 (20110101)

Expiration Date: 5/06/12018