Patent Number: 8,721,906

Title: Method to increase yield and reduce down time in semiconductor fabrication units by preconditioning components using sub-aperture reactive atom etch

Abstract: An embodiment of the present inventions provides a method for preconditioning a semiconductor fabrication component using a plasma etching process and an optional enhanced ultrasonic and/or megasonic preconditioning step in order to eliminate the need for a burn-in period typically associated with said components, as well as extend the useful life of the component during its wear-out phase.

Inventors: Hambek; Wayne (Frisco, TX)

Assignee: Poco Graphite, Inc.

International Classification: G01L 21/30 (20060101); G01R 31/00 (20060101)

Expiration Date: 5/13/12018