Patent Number: 8,722,434

Title: Integrated trench MOSFET with trench Schottky rectifier

Abstract: An integrated circuit comprising trench MOSFET having trenched source-body contacts and trench Schottky rectifier having trenched anode contacts is disclosed. By employing the trenched contacts in trench MOSFET and trench Schottky rectifier, the integrated circuit is able to be shrunk to achieve low specific on-resistance for trench MOSFET, and low V.sub.f and reverse leakage current for trench Schottky Rectifier.

Inventors: Hsieh; Fu-Yuan (Banciao, TW)

Assignee: Force MOS Technology Co., Ltd.

International Classification: H01L 29/78 (20060101); H01L 29/66 (20060101)

Expiration Date: 5/13/12018