Patent Number: 8,722,447

Title: Selenization of precursor layer containing CulnS.sub.2 nanoparticles

Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS.sub.2, CuIn(S.sub.y,Se.sub.1-y).sub.2, CuGaS.sub.2, CuGa(S.sub.y, Se.sub.1-y).sub.2, Cu(In.sub.xGa.sub.1-x)S.sub.2, and Cu(In.sub.xGa.sub.1-x)(S.sub.y, Se.sub.1-y).sub.2 nanoparticles and combinations thereof, wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

Inventors: Agrawal; Rakesh (West Lafayette, IN), Hillhouse; Hugh (Seattle, WA), Guo; Qijie (West Lafayette, IN)

Assignee: Purdue Research Foundation

International Classification: H01L 21/00 (20060101); H01L 31/00 (20060101)

Expiration Date: 5/13/12018