Patent Number: 8,722,526

Title: Growing of gallium-nitrade layer on silicon substrate

Abstract: Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer.

Inventors: Lee; Sang In (Sunnyvale, CA)

Assignee: Veeco ALD Inc.

International Classification: H01L 21/28 (20060101); C30B 28/12 (20060101); C30B 28/14 (20060101); H01L 21/3205 (20060101); H01L 31/0256 (20060101); C30B 23/00 (20060101); C30B 25/00 (20060101)

Expiration Date: 5/13/12018