Patent Number: 8,788,242

Title: Pattern measurement apparatus

Abstract: It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure.

Inventors: Matsuoka; Ryoichi (Yotsukaido, JP), Sugiyama; Akiyuki (Hitachinaka, JP), Toyota; Yasutaka (Mito, JP)

Assignee: Hitachi High-Technologies Corporation

International Classification: G01B 15/00 (20060101); G06F 15/00 (20060101)

Expiration Date: 2022-07-22 0:00:00