Patent Number: 8,791,500

Title: Semiconductor device having lateral insulated gate bipolar transistor

Abstract: A semiconductor device having a lateral insulated gate bipolar transistor includes a first conductivity type drift layer, a second conductivity type collector region formed in a surface portion of the drift layer, a second conductivity type channel layer formed in the surface portion of the drift layer, a first conductivity type emitter region formed in a surface portion of the channel layer, and a hole stopper region formed in the drift layer and located between the collector region and the emitter region. Holes are injected from the collector region into the drift layer and flow toward the emitter region through a hole path. The hole stopper region blocks a flow of the holes and narrows the hole path to concentrate the holes.

Inventors: Ashida; Youichi (Nukata-gun, JP), Takahashi; Shigeki (Okazaki, JP)

Assignee: DENSO CORPORATION

International Classification: H01L 29/74 (20060101); H01L 31/111 (20060101)

Expiration Date: 7/29/12018