Patent Number: 8,791,518

Title: Method for manufacturing semiconductor device

Abstract: A method for manufacturing a semiconductor device is disclosed. In the method for manufacturing the semiconductor device, a capacitor structure is modified to ensure capacitance of the capacitor, and the height of the capacitor is reduced to prevent defects such as a leaning capacitor or a poor bridge from being generated, such that the fabrication process of semiconductor devices is simplified and therefore the semiconductor devices can be stably manufactured.

Inventors: Kim; Sang Heon (Seoul, KR)

Assignee: Hynix Semiconductor Inc.

International Classification: H01L 27/108 (20060101)

Expiration Date: 7/29/12018