Patent Number: 8,791,523

Title: Nonvolatile semiconductor storage device and method for manufacturing same

Abstract: A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode films stacked along a first axis perpendicular to a major surface of the substrate. The semiconductor layers penetrate through the structural body along the first axis. The memory film is provided between the electrode films and the semiconductor layer. The connecting member is provided between the substrate and the structural body and connected to respective end portions of two adjacent ones of the semiconductor layers. The conductive member is provided between the substrate and the connecting member, extends from the memory region to the non-memory region, includes a recess provided above the non-memory region, and includes a first silicide portion provided in the recess.

Inventors: Iino; Hiromitsu (Mie-ken, JP), Iguchi; Tadashi (Mie-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/336 (20060101); H01L 29/792 (20060101)

Expiration Date: 7/29/12018