Patent Number: 8,791,524

Title: Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device

Abstract: According to one embodiment, a method is disclosed for manufacturing a nonvolatile semiconductor memory device. The method can includes forming a semiconductor layer containing an impurity and forming a pattern on the semiconductor layer. The method can include forming first insulating layers in a stripe shape from a surface of the semiconductor layer toward an inside and forming a first insulating film on the semiconductor layer and on the first insulating layers to form a stacked body including electrode layers on the first insulating film. The method can include forming a pair of holes in the stacked body and forming a space portion connected to a lower end of the holes. The method can include forming a memory film on a side wall of the holes. In addition, the method can include forming a channel body layer on a surface of the memory film.

Inventors: Ichinose; Daigo (Mie-ken, JP), Ishihara; Hanae (Mie-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/72 (20060101); H01L 21/336 (20060101)

Expiration Date: 7/29/12018