Patent Number: 8,791,542

Title: Solid-state imaging device

Abstract: According to an embodiment, a solid-state imaging device includes a photoelectric, conversion element. The photoelectric conversion element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the solid-state imaging device, D.sub.2m3/L.sub.2m3.times.n.sub.i3.sup.2/N.sub.2<D.sub.1M2/L.sub.1M2.t- imes.n.sub.i2.sup.2/N.sub.2 and D.sub.1m1/L.sub.1m1.times.n.sub.i1.sup.2/N.sub.1<D.sub.1m2/L.sub.1m2.t- imes.n.sub.i2.sup.2/N.sub.1 are established.

Inventors: Toriyama; Shuichi (Kanagawa, JP), Kokubun; Koichi (Kanagawa, JP), Sasaki; Hiroki (Kanagawa, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 31/06 (20120101); H01L 27/146 (20060101)

Expiration Date: 7/29/12018