Patent Number: 8,795,542

Title: Removal of silicon nitrides during manufacturing of semiconductor devices

Abstract: A method to remove excess material during the manufacturing of semiconductor devices includes providing a semiconductor wafer comprising silicon nitride deposited thereon and applying a chemical solution to the semiconductor wafer, wherein the chemical solution comprises a combination of sulfuric acid and deionized water.

Inventors: Adhiprakasha; Edwin (Mountain View, CA)

Assignee: Intermolecular, Inc.

International Classification: C03C 15/00 (20060101)

Expiration Date: 8/05/12018