Patent Number: 8,796,045

Title: Magnetoresistive random access memory

Abstract: A method of forming a magnetic random access memory (MRAM) device includes forming at least one write line, forming a first insulating layer over the at least one write line and forming a heating line on the first insulating layer. The method includes forming at least one tunnel junction above the at least one write line, the at least one tunnel junction connected to the heating line, forming a second insulating layer on the heating line and forming heat current supply vias at each end of the current line. The method further includes forming heat current supply lines connected to each heat current supply via and forming at least one read line above the at least one tunnel junction and physically connected to the at least one tunnel junction.

Inventors: Worledge; Daniel C. (Cortlandt Manor, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 43/08 (20060101); H01L 27/22 (20060101)

Expiration Date: 8/05/12018