Patent Number: 8,796,119

Title: Nanoelectronic structure and method of producing such

Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

Inventors: Samuelson; Lars Ivar (Malmo, SE), Svensson; Patrik (Lund, SE), Ohlsson; Jonas (Malmo, SE), Lowgren; Truls (Malmo, SE)

Assignee: Qunano AB

International Classification: H01L 21/20 (20060101); H01L 21/36 (20060101)

Expiration Date: 8/05/12018