Patent Number: 8,796,120

Title: High throughput epitaxial lift off for flexible electronics

Abstract: A method of removing a semiconductor device layer from an underlying base substrate is provided in which a sacrificial phosphide-containing layer is formed between a semiconductor device layer and a base substrate. In some embodiments, a semiconductor buffer layer can be formed on an upper surface of the base substrate prior to forming the sacrificial phosphide-buffer layer. The resultant structure is then etched utilizing a non-HF etchant to release the semiconductor device layer from the base semiconductor substrate. After releasing the semiconductor device layer from the base substrate, the base substrate can be re-used.

Inventors: Cheng; Cheng-Wei (White Plains, NY), Shiu; Kuen-Ting (White Plains, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/20 (20060101)

Expiration Date: 8/05/12018