Patent Number: 8,796,125

Title: Printed, self-aligned, top gate thin film transistor

Abstract: A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.

Inventors: Rockenberger; Joerg (San Jose, CA), Cleeves; James Montague (Redwood City, CA), Kamath; Arvind (Mountain View, CA)

Assignee: Kovio, Inc.

International Classification: H01L 21/22 (20060101)

Expiration Date: 8/05/12018