Patent Number:
8,796,125
Title:
Printed, self-aligned, top gate thin film transistor
Abstract:
A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.
Inventors:
Rockenberger; Joerg (San Jose, CA), Cleeves; James Montague (Redwood City, CA), Kamath; Arvind (Mountain View, CA)
Assignee:
Kovio, Inc.
International Classification:
H01L 21/22 (20060101)
Expiration Date:
8/05/12018
