Patent Number: 8,796,128

Title: Dual metal fill and dual threshold voltage for replacement gate metal devices

Abstract: A structure and method for forming a dual metal fill and dual threshold voltage for replacement gate metal devices is disclosed. A selective deposition process involving titanium and aluminum is used to allow formation of two adjacent transistors with different fill metals and different workfunction metals, enabling different threshold voltages in the adjacent transistors.

Inventors: Edge; Lisa F. (Albany, NY), Berliner; Nathaniel (Albany, NY), Demarest; James John (Albany, NY), Haran; Balasubramanian S. (Albany, NY), Donohue; Raymond J. (Selkirk, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/28 (20060101); H01L 27/088 (20060101)

Expiration Date: 8/05/12018