Patent Number: 8,796,150

Title: Bilayer trench first hardmask structure and process for reduced defectivity

Abstract: A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.

Inventors: Akinmade-Yusuff; Hakeem B. S. (Beacon, NY), Choi; Samuel Sung Shik (Beacon, NY), Engbrecht; Edward R. (Poughkeepsie, NY), Fitzsimmons; John A. (Poughkeepsie, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/311 (20060101); H01L 21/32 (20060101); H01L 29/06 (20060101)

Expiration Date: 8/05/12018