Patent Number: 8,796,398

Title: Superfine pattern mask, method for production thereof, and method employing the same for forming superfine pattern

Abstract: There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity. The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.

Inventors: Padmanaban; Munirathna (Bridgewater, NJ), Li; Jin (Shizuoka, JP), Koike; Toru (Shizuoka, JP), Takano; Yusuke (Shizuoka, JP), Kurosawa; Kazunori (Shizuoka, JP)

Assignee: AZ Electronic Materials USA Corp.

International Classification: C08L 83/16 (20060101)

Expiration Date: 8/05/12018