Patent Number: 8,796,668

Title: Metal-free integrated circuits comprising graphene and carbon nanotubes

Abstract: An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a carbon nanotube film. A method of fabricating an integrated circuit comprising graphene and carbon nanotubes, includes forming a graphene layer; doping a portion of the graphene layer, resulting in doped graphene and undoped graphene; forming a carbon nanotube film; and etching the carbon nanotube film to form a gate of a transistor, wherein the transistor further comprises a channel comprising the undoped graphene and a contact comprising the doped graphene. A transistor includes a gate, the gate comprising a carbon nanotube film; a channel, the channel comprising undoped graphene; and a contact, the contact comprising doped graphene.

Inventors: Lin; Yu-Ming (Yorktown Heights, NY), Yau; Jeng-Bang (Yorktown Heights, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/66 (20060101); H01L 21/336 (20060101)

Expiration Date: 8/05/12018