Patent Number: 8,796,680

Title: Thin-film transistor substrate and method of manufacturing the same

Abstract: A thin-film transistor (TFT) substrate includes a semiconductor pattern, a conductive pattern, a first wiring pattern, an insulation pattern and a second wiring pattern. The semiconductor pattern is formed on a substrate. The conductive pattern is formed as a layer identical to the semiconductor pattern on the substrate. The first wiring pattern is formed on the semiconductor pattern. The first wiring pattern includes a source electrode and a drain electrode spaced apart from the source electrode. The insulation pattern is formed on the substrate having the first wiring pattern to cover the first wiring pattern. The second wiring pattern is formed on the insulation pattern. The second wiring pattern includes a gate electrode formed on the source and drain electrodes. Therefore, a TFT substrate is manufactured using two or three masks, so that manufacturing costs may be decreased.

Inventors: Kwak; Sang-Ki (Cheonan-si, KR), Kong; Hyang-Shik (Seongnam-si, KR), Kim; Sun-Il (Yongin-si, KR)

Assignee: Samsung Display Co., Ltd.

International Classification: H01L 29/26 (20060101)

Expiration Date: 8/05/12018