Patent Number: 8,796,694

Title: Semiconductor device

Abstract: A semiconductor device includes a semiconductor substrate made of silicon carbide and having a surface, a normal vector for the surface having an off angle with respect to a <0001> direction or a <000-1> direction, a semiconductor layer of a first conductivity type formed on the semiconductor substrate, a first semiconductor region of a second conductivity type formed in a surface region of the semiconductor layer, a source region of a first conductivity type formed in a surface region of the first semiconductor region, a second semiconductor region of a second conductivity type formed in the surface region of the semiconductor layer, contacting the first semiconductor region, and having a bottom surface lower than a bottom surface of the first semiconductor region, wherein at least one end of the bottom surface of the second semiconductor region is perpendicular to an off angle direction.

Inventors: Hatakeyama; Tetsuo (Yokohama, JP), Shinohe; Takashi (Yokosuka, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/15 (20060101)

Expiration Date: 8/05/12018