Patent Number: 8,796,711

Title: Light-emitting element

Abstract: A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer, a reflective portion between the semiconductor substrate and the light emitting portion, and a current dispersion layer on the light emitting portion. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a thickness T.sub.A1 defined by a formula (1) and the second semiconductor layer has a thickness T.sub.B1 defined by a formula (2), where .lamda..sub.P represents a peak wavelength of the light emitted from the active layer, n.sub.A represents a refractive index of the first semiconductor layer, n.sub.B represents a refractive index of the second semiconductor layer, n.sub.In represents a refractive index of a first cladding layer, and .theta. represents an incident angle of light from the first cladding layer to the second semiconductor layer. .times..times..lamda..times..times..times..times..times..theta..times..ti- mes..times..times..lamda..times..times..times..times..times..theta..times.- .times. ##EQU00001##

Inventors: Konno; Taichiroo (Hitachi, JP)

Assignee: Hitachi Metals, Ltd.

International Classification: H01L 33/10 (20100101)

Expiration Date: 8/05/12018