Patent Number: 8,796,730

Title: Power semiconductor module

Abstract: Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board.

Inventors: Lee; Young Ki (Gyunggi-do, KR), Seo; Dong Soo (Gyunggi-do, KR), Kim; Kwang Soo (Gyunggi-do, KR), Kwak; Young Hoon (Gyunggi-do, KR)

Assignee: Samsung Electro-Mechanics Co., Ltd.

International Classification: H01L 29/739 (20060101)

Expiration Date: 8/05/12018