Patent Number: 8,796,750

Title: Edge illuminated photodiodes

Abstract: This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

Inventors: Bui; Peter Steven (Cerritos, CA), Taneja; Narayan Dass (Long Beach, CA), Mansouri; Manoocher (Studio City, CA)

Assignee: OSI Optoelectronics, Inc.

International Classification: H01L 31/062 (20120101); H01L 31/113 (20060101); H01L 31/0232 (20140101); H01L 31/06 (20120101)

Expiration Date: 8/05/12018