Patent Number: 8,796,755

Title: Nonvolatile semiconductor memory device and method of manufacturing the same

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first insulating layer on a semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer. The charge storage layer includes a floating gate layer on the first insulating layer, an interface insulating layer on the floating gate layer, a first charge trap layer on the interface insulating layer, and a second charge trap layer on the first charge trap layer, and a trap level of the second charge trap layer is lower than a trap level of the first charge trap layer.

Inventors: Sato; Motoyuki (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/792 (20060101)

Expiration Date: 8/05/12018