Patent Number: 8,796,784

Title: Devices and methods to optimize materials and properties for replacement metal gate structures

Abstract: Devices and methods for device fabrication include forming a gate structure with a sacrificial material. Silicided regions are formed on source/drain regions adjacent to the gate structure or formed at the bottom of trench contacts within source/drain areas. The source/drain regions or the silicided regions are processed to build resistance to subsequent thermal processing and adjust Schottky barrier height and thus reduce contact resistance. Metal contacts are formed in contact with the silicided regions. The sacrificial material is removed and replaced with a replacement conductor.

Inventors: Ando; Takashi (Tuckahoe, NY), Lavoie; Christian (Pleasantville, NY), Narayanan; Vijay (New York, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101)

Expiration Date: 8/05/12018