Patent Number: 8,796,840

Title: Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers

Abstract: A semiconductor assembly includes a first subassembly comprising a heat sink and a first patterned polymer layer disposed on a surface of the heat sink to define an exposed portion of the first surface. The exposed portion of the first surface extends radially inward along the heat sink surface from the first layer. The subassembly also includes a second patterned polymer layer disposed on a radially outer portion of the first patterned polymer layer. The first and second layers define a cell for accommodating a power semiconductor die. Solder material is disposed on the exposed portion of the heat sink surface and in the cell. A power semiconductor die is located within the cell on a radially inward portion of the first layer and thermally coupled to the heat sink by the solder material.

Inventors: Chiang; Wan-Lan (Taipei, TW), Lin; Kuang Hann (Taipei, TW), Peng; Chih-Ping (Taipei, TW)

Assignee: Vishay General Semiconductor LLC

International Classification: H01L 23/34 (20060101); H01L 23/10 (20060101); H01L 21/00 (20060101)

Expiration Date: 8/05/12018