Patent Number: 8,797,782

Title: Semiconductor device and operation method thereof

Abstract: An operation method of a semiconductor device, includes providing one or more memory elements each including a first semiconductor layer, second and third semiconductor layers, a dielectric film and a conductive film, a first electrode, a second electrode, and a third electrode, and performing operation of writing information on a memory element to be driven of the one or more memory elements. The operation of writing is performed by forming a filament in a region between the second and third semiconductor layers, which is a conductive path electrically linking these semiconductor layers, the filament being formed by causing a dielectric breakdown of at least a part of the dielectric film, through application of a voltage equal to or higher than a predetermined threshold between the second and third electrodes, thereby causing an electric current to flow between the conductive film and the third semiconductor layer.

Inventors: Kanematsu; Shigeru (Kanagawa, JP), Yanagisawa; Yuki (Kanagawa, JP), Iwasaki; Matsuo (Nagasaki, JP)

Assignee: Sony Corporation

International Classification: G11C 17/00 (20060101)

Expiration Date: 8/05/12018