Patent Number: 8,815,621

Title: Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer

Abstract: A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is formed on a supporting base 13 in a reactor 10. An organometallic source and ammonia are supplied to the reactor 10 to grow the GaN semiconductor layer 17 on a GaN semiconductor layer 15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions 15 and 17 are grown, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is prepared in the reactor 10. After the atmosphere 19 is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region 17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor 17a and an epitaxial wafer E has been fabricated.

Inventors: Ueno; Masaki (Itami, JP), Yoshizumi; Yusuke (Itami, JP), Nakamura; Takao (Itami, JP)

Assignee: Sumitomo Electric Industries, Ltd.

International Classification: H01L 21/00 (20060101)

Expiration Date: 8/26/12018