Patent Number: 8,815,661

Title: MIM capacitor in FinFET structure

Abstract: A method of forming a FinFET structure having a metal-insulator-metal capacitor. Silicon fins are formed on a semiconductor substrate followed by formation of the metal-insulator-metal capacitor on the silicon fins by depositing sequential layers of a first layer of titanium nitride, a dielectric layer and a second layer of titanium nitride. A polysilicon layer is deposited over the metal-insulator-metal capacitor followed by etching back the polysilicon layer and the metal-insulator-metal capacitor layers from ends of the silicon fins so that the first and second ends of the silicon fins protrude from the polysilicon layer. A spacer may be formed on surfaces facing the ends of the silicon fins followed by the formation of epitaxial silicon over the ends of the silicon fins. Also disclosed is a FinFET structure having a metal-insulator-metal capacitor.

Inventors: Basker; Veeraraghavan S. (Schenectady, NY), Leobandung; Effendi (Wappingers Falls, NY), Yamashita; Tenko (Schenectady, NY), Yeh; Chun-Chen (Clifton Park, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/94 (20060101); H01L 21/336 (20060101)

Expiration Date: 8/26/12018