Patent Number: 8,815,683

Title: Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same

Abstract: A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.

Inventors: Kim; Sangsig (Seoul, KR), Yoon; Chang Jun (Seoul, KR), Jeong; Dong Young (Seoul, KR), Yeom; Dong Hyuk (Seoul, KR)

Assignee: Intellectual Discovery Co., Ltd.

International Classification: H01L 29/72 (20060101)

Expiration Date: 8/26/12018