Patent Number: 8,815,687

Title: Methods of manufacturing semiconductor devices having spacers disposed on an inner sidewall of a contact hole formed in a layer of the semiconductor devices, and a contact plug disposed therein

Abstract: Provided are methods of manufacturing semiconductor devices. The method of manufacturing the semiconductor device may include forming a transistor on a substrate, the transistor having first and second doped regions, forming an interlayer dielectric on the substrate, forming a contact hole exposing the first doped region of the transistor, forming a spacer disposed on an inner sidewall of the contact hole, and filling the contact hole provided with the spacer with a conductive layer to form a contact plug.

Inventors: Park; Jongchul (Hwaseong-si, KR), Jeong; Sangsup (Suwon Si, KR), Kang; Byung-Jin (Doaegu, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/336 (20060101)

Expiration Date: 8/26/12018