Patent Number: 8,815,688

Title: Method of manufacturing power device

Abstract: A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.

Inventors: Lee; Jae Hoon (Suwon-si, KR), Kim; Ki Se (Suwon-si, KR), Lee; Jung Hee (Daegu, KR), Im; Ki Sik (Daegu, KR), Kim; Dong Seok (Daegu, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 29/778 (20060101)

Expiration Date: 8/26/12018