Patent Number: 8,815,717

Title: Vapor deposition method and vapor deposition apparatus

Abstract: According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

Inventors: Harada; Yoshiyuki (Tokyo, JP), Tachibana; Koichi (Kanagawa-ken, JP), Hikosaka; Toshiki (Tokyo, JP), Nago; Hajime (Kanagawa-ken, JP), Nunoue; Shinya (Chiba-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/20 (20060101); H01L 21/36 (20060101)

Expiration Date: 8/26/12018