Patent Number: 8,816,417

Title: Semiconductor devices and methods of forming semiconductor devices

Abstract: A semiconductor device includes a back bias dielectric including a negative fixed charge, a gate electrode overlapping the back bias dielectric, a semiconductor layer disposed between the gate electrode and the back bias dielectric, and a gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the negative fixed charge accumulates holes at a surface of the semiconductor layer facing the back bias dielectric.

Inventors: Jeon; Sanghun (Yongin-si, KR), Kang; Jong-Hyuk (Suwon-si, KR), Park; Heungkyu (Gumi-si, KR), Lee; Jongwook (Yongin-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 27/108 (20060101); H01L 29/94 (20060101)

Expiration Date: 8/26/12018