Patent Number: 8,816,448

Title: Semiconductor device and manufacturing method thereof

Abstract: A semiconductor device including a semiconductor substrate, an interface layer formed on the semiconductor substrate including at least 1.times.10.sup.20 atoms/cm.sup.3 of S (Sulfur), a metal-semiconductor compound layer formed on the interface layer, the metal-semiconductor compound layer including at least 1.times.10.sup.20 atoms/cm.sup.3 of S in the its whole depth, and a metal electrode formed on the metal-semiconductor compound layer.

Inventors: Nishi; Yoshifumi (Kanagawa-ken, JP), Kinoshita; Atsuhiro (Kanagawa-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/78 (20060101)

Expiration Date: 8/26/12018