Patent Number: 8,816,455

Title: Memory devices with magnetic random access memory (MRAM) cells and associated structures for connecting the MRAM cells

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Inventors: Berger; Neal (Cupertino, CA), El Baraji; Mourad (Fremont, CA), Levi; Amitay (Cupertino, CA)

Assignee: Crocus Technology Inc.

International Classification: H01L 29/82 (20060101)

Expiration Date: 8/26/12018