Patent Number: 8,816,464

Title: Photodiode and photodiode array with improved performance characteristics

Abstract: The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark current, low capacitance and improved signal-to-noise ratio characteristics. More specifically, the present invention is a photodiode and/or photodiode array that includes a metal shield for reflecting light back into a scintillator crystal, thus allowing for a relatively small p+ diffused area.

Inventors: Bui; Peter Steven (Cerritos, CA), Taneja; Narayan Dass (Long Beach, CA)

Assignee: OSI Optoelectronics, Inc.

International Classification: H01L 31/06 (20120101)

Expiration Date: 8/26/12018