Patent Number: 8,816,470

Title: Independently voltage controlled volume of silicon on a silicon on insulator chip

Abstract: A semiconductor chip has an independently voltage controlled silicon region that is a circuit element useful for controlling capacitor values of eDRAM trench capacitors and threshold voltages of field effect transistors overlying the independently voltage controlled silicon region. A bottom, or floor, of the independently voltage controlled silicon region is a deep implant of opposite doping to a doping of a substrate of the independently voltage controlled silicon region. A top, or ceiling, of the independently voltage controlled silicon region is a buried oxide implant in the substrate. Sides of the independently voltage controlled silicon region are deep trench isolation. Voltage of the independently voltage controlled silicon region is applied through a contact structure formed through the buried oxide.

Inventors: Erickson; Karl R. (Rochester, MN), Paone; Phil C. (Rochester, MN), Paulsen; David P. (Dodge Center, MN), Sheets, II; John E. (Zumbrota, MN), Uhlmann; Gregory J. (Rochester, MN), Williams; Kelly L. (Rochester, MN)

Assignee: International Business Machines Corporation

International Classification: H01L 29/06 (20060101); H01L 21/762 (20060101)

Expiration Date: 8/26/12018